Samsung Electronics has disclosed its roadmap for the 10nm-class 7th generation 1d DRAM, with equipment introduction scheduled for the first half of next year. Initial production is projected to commence by the end of the following year, marking a significant shrink from the current 1c DRAM line width of 11-12nm to 10-11nm. This architectural refinement aims to enhance both performance metrics and energy efficiency ratios.

While the process development remains relatively advanced, critical manufacturing equipment is still undergoing finalization. Samsung and its strategic partners are intensifying research on yield optimization and performance tuning, with plans to solidify the implementation timeline by year-end. The 1d DRAM node will function as a foundational component for Samsung's AI memory portfolio, specifically underpinning the HBM5E high-bandwidth memory core chip slated for commercial deployment in 2029.