Woofun AI reports that Samsung Electronics has achieved a reliability test yield exceeding 70% for its seventh-generation HBM4E memory chips. Song Jae-hyuk, CTO of the DS division, confirmed this progress during an internal briefing on June 30th, noting that while the industry typically defines "mature yield" at over 80%, the current figure indicates the development is entering a stable range.

The company previously mass-produced HBM4 in February and released technical specifications for the 12-layer HBM4E on May 29th, with samples shipped to key customers. HBM4 is slated for NVIDIA's Vera Rubin AI accelerator later this year, while HBM4E is expected to power the Vera Rubin Ultra next year.

Additionally, Samsung aims to secure production approval for its D1d next-generation DRAM process by November, a core technology planned for the upcoming HBM5 generation.