Woofun AI reports that Samsung is expanding its NAND flash partnership with Nvidia, building on existing DRAM, HBM, and foundry ties. The company is increasing V9 supply, starting V10 mass production, and accelerating 500-layer V11 development. Driven by AI server KV cache and Nvidia CMX storage systems (including 576 SSDs with a capacity of 9600TB), Samsung is shifting V-NAND capacity to V9. Analysts compare the Rubin CMX demand impact to adding an Apple-sized source to the market. Samsung is also implementing molybdenum innovations for V10 density, while Senior executive Lee Jae-yong is set to meet with Huang Renxun to discuss HBM and data center cooperation.