ChangXin Memory Considers Second Beijing DRAM Fab Amid Early Financing Talks

ChangXin Memory explores a second Beijing DRAM facility, seeking $8.9M+ in support. The expansion follows an $8.6B IPO and aims to double capacity as AI demand rises.

Woofun AI reports that ChangXin Memory is evaluating the construction of a second 12-inch DRAM wafer fab in Beijing's Yizhuang area, located at its existing site. The company is in early-stage discussions with the Beijing Economic and Technological Development Zone and state-owned tech firms for funding, seeking at least 60 million yuan ($8.9 million), though financing terms remain adjustable.

Currently operating three fabs with 100,000 wafers monthly each, ChangXin aims to double capacity to over 600,000 wafers with new Shanghai and Hefei projects. This expansion follows an $8.6 billion IPO last month, the largest semiconductor listing in mainland China, driving a 13% stock increase. As the world’s fourth-largest DRAM maker, the firm competes against rivals holding nearly 90% global share, supported by Beijing and Shanghai funding amid rising AI and data center demand.