Samsung Plans High-NA EUV Adoption for 1nm Process by 2030

Samsung targets 2030 mass production of 1nm chips using High-NA EUV, shifting from current 0.33 NA multi-patterning to improve resolution and efficiency.

Woofun AI reports that Samsung Electronics intends to implement High-NA EUV technology for its 1-nanometer (A10) process node, with mass production scheduled for approximately 2030. Park Chang-min of the Semiconductor Research Institute confirmed this roadmap at the '2026 Next Generation Lithography + Patterning Academic Conference.'

The company currently utilizes 0.33 NA EUV multi-patterning for 2-nanometer and smaller nodes, aiming for 1.4-nanometer mass production by 2029. High-NA EUV raises the numerical aperture to 0.55, enabling single-step patterning for ultra-fine processes. While this enhances resolution and reduces costs, it demands expensive equipment and material upgrades. Park noted that 0.33 NA multi-patterning will remain mainstream for near-term nodes before High-NA becomes the core technology.