Woofun AI reports that SK Hynix has initiated equipment procurement for the Y1 fab's first-phase cleanroom at the Yongin Semiconductor Cluster, aiming to add 20,000 wafers per month of 1c DRAM capacity. The operational start date for this phase has been advanced from May 2027 to February 2027, with trial production lines commencing construction then and formal installation occurring between March and April.

The facility will primarily manufacture sixth-generation 10-nanometer 1c DRAM for AI-focused DDR and LPDDR products, targeting early HBM4E commercialization in 2027. To accelerate equipment introduction, contract negotiations have been moved to early Q3.

Additionally, the overall Yongin cluster completion target was shifted from 2045 to 2033, with Y1's second and third-phase cleanroom construction expected to begin in H2.